CD4518 DIP-16

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Trang 1 / 10

7-1206

CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.

1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 1999

December 1992

CD4518BMS,

CD4520BMS

CMOS Dual Up Counters

Features

• High Voltage Types (20V Rating)

• CD4518BMS Dual BCD Up Counter

• CD4520BMS Dual Binary Up Counter

• Medium Speed Operation

- 6MHz Typical Clock Frequency at 10V

• Positive or Negative Edge Triggering

• Synchronous Internal Carry Propagation

• 100% Tested for Quiescent Current at 20V

• 5V, 10V and 15V Parametric Ratings

• Maximum Input Current of 1μA at 18V Over Full Pack- age Temperature Range; 100nA at 18V and +25oC

• Noise Margin (Over Full Package/Temperature Range)

- 1V at VDD = 5V

- 2V at VDD = 10V

- 2.5V at VDD = 15V

• Standardized Symmetrical Output Characteristics

• Meets All Requirements of JEDEC Tentative Standard

No. 13B, “Standard Specifications for Description of

‘B’ Series CMOS Devices”

Applications

• Multistage Synchronous Counting

• Multistage Ripple Counting

• Frequency Dividers

Description

CD4518BMS Dual BCD Up Counter and CD4520BMS Dual

Binary Up Counter each consist of two identical, internally

synchronous 4-stage counters. The counter stages are

D-type flip-flops having interchangeable CLOCK and

ENABLE lines for incrementing on either the positive-going

or negative-going transition. For single unit operation the

ENABLE input is maintained high and the counter advances

on each positive-going transition of the CLOCK. The

counters are cleared by high levels on their RESET lines.

The counter can be cascaded in the ripple mode by connect- ing Q4 to the enable input of the subsequent counter while

the CLOCK input of the latter is held low.

The CD4518BMS and CD4520BMS are supplied in these

16-lead outline packages:

Braze Seal DIP H4S

Frit Seal DIP H1F

Ceramic Flatpack *H6P †H6W

*CD4518B Only †CD4520B Only

File Number 3342

Pinout

CD4518BMS, CD4520BMS

TOP VIEW

Functional Diagram

14

15

16

9

13

12

11

10

1

2

3

4

5

7

6

8

CLOCK A

ENABLE A

Q1A

Q2A

Q3A

Q4A

VSS

RESET A

VDD

Q4B

Q3B

Q2B

Q1B

ENABLE B

CLOCK B

RESET B

VSS = 8

VDD = 16

÷10/÷16

C

R

1 4

5

6

Q1A

Q2A

Q3A

Q4A

RESET A

7

2

CLOCK A

ENABLE A

÷10/÷16

C

R

9 12

13

14

Q1B

Q2B

Q3B

Q4B

RESET B

15

10

CLOCK B

ENABLE B

3

11

Trang 2 / 10

7-1207

Specifications CD4518BMS, CD4520BMS

Absolute Maximum Ratings Reliability Information

DC Supply Voltage Range, (VDD) . . . . . . . . . . . . . . . -0.5V to +20V

(Voltage Referenced to VSS Terminals)

Input Voltage Range, All Inputs . . . . . . . . . . . . .-0.5V to VDD +0.5V

DC Input Current, Any One Input . . . . . . . . . . . . . . . . . . . . . . . .±10mA

Operating Temperature Range. . . . . . . . . . . . . . . . -55oC to +125oC

Package Types D, F, K, H

Storage Temperature Range (TSTG) . . . . . . . . . . . -65oC to +150oC

Lead Temperature (During Soldering) . . . . . . . . . . . . . . . . . +265oC

At Distance 1/16 ± 1/32 Inch (1.59mm ± 0.79mm) from case for

10s Maximum

Thermal Resistance . . . . . . . . . . . . . . . . θja θjc

Ceramic DIP and FRIT Package . . . . . 80oC/W 20oC/W

Flatpack Package . . . . . . . . . . . . . . . . 70oC/W 20oC/W

Maximum Package Power Dissipation (PD) at +125oC

For TA = -55oC to +100oC (Package Type D, F, K) . . . . . . 500mW

For TA = +100oC to +125oC (Package Type D, F, K). . . . . .Derate

Linearity at 12mW/oC to 200mW

Device Dissipation per Output Transistor . . . . . . . . . . . . . . . 100mW

For TA = Full Package Temperature Range (All Package Types)

Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +175oC

TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS

PARAMETER SYMBOL CONDITIONS (NOTE 1)

GROUP A

SUBGROUPS TEMPERATURE

LIMITS

MIN MAX UNITS

Supply Current IDD VDD = 20V, VIN = VDD or GND 1 +25oC - 10 μA

2 +125oC - 1000 μA

VDD = 18V, VIN = VDD or GND 3 -55oC - 10 μA

Input Leakage Current IIL VIN = VDD or GND VDD = 20 1 +25oC -100 - nA

2 +125oC -1000 - nA

VDD = 18V 3 -55oC -100 - nA

Input Leakage Current IIH VIN = VDD or GND VDD = 20 1 +25oC - 100 nA

2 +125oC - 1000 nA

VDD = 18V 3 -55oC - 100 nA

Output Voltage VOL15 VDD = 15V, No Load 1, 2, 3 +25oC, +125oC, -55oC - 50 mV

Output Voltage VOH15 VDD = 15V, No Load (Note 3) 1, 2, 3 +25oC, +125oC, -55oC 14.95 - V

Output Current (Sink) IOL5 VDD = 5V, VOUT = 0.4V 1 +25oC 0.53 - mA

Output Current (Sink) IOL10 VDD = 10V, VOUT = 0.5V 1 +25oC 1.4 - mA

Output Current (Sink) IOL15 VDD = 15V, VOUT = 1.5V 1 +25oC 3.5 - mA

Output Current (Source) IOH5A VDD = 5V, VOUT = 4.6V 1 +25oC - -0.53 mA

Output Current (Source) IOH5B VDD = 5V, VOUT = 2.5V 1 +25oC - -1.8 mA

Output Current (Source) IOH10 VDD = 10V, VOUT = 9.5V 1 +25oC - -1.4 mA

Output Current (Source) IOH15 VDD = 15V, VOUT = 13.5V 1 +25oC - -3.5 mA

N Threshold Voltage VNTH VDD = 10V, ISS = -10μA 1 +25oC -2.8 -0.7 V

P Threshold Voltage VPTH VSS = 0V, IDD = 10μA 1 +25oC 0.7 2.8 V

Functional F VDD = 2.8V, VIN = VDD or GND 7 +25oC VOH >

VDD/2

VOL <

VDD/2

V

VDD = 20V, VIN = VDD or GND 7 +25oC

VDD = 18V, VIN = VDD or GND 8A +125oC

VDD = 3V, VIN = VDD or GND 8B -55oC

Input Voltage Low

(Note 2)

VIL VDD = 5V, VOH > 4.5V, VOL < 0.5V 1, 2, 3 +25oC, +125oC, -55oC - 1.5 V

Input Voltage High

(Note 2)

VIH VDD = 5V, VOH > 4.5V, VOL < 0.5V 1, 2, 3 +25oC, +125oC, -55oC 3.5 - V

Input Voltage Low

(Note 2)

VIL VDD = 15V, VOH > 13.5V,

VOL < 1.5V

1, 2, 3 +25oC, +125oC, -55oC- 4 V

Input Voltage High

(Note 2)

VIH VDD = 15V, VOH > 13.5V,

VOL < 1.5V

1, 2, 3 +25oC, +125oC, -55oC 11 - V

NOTES: 1. All voltages referenced to device GND, 100% testing being

implemented.

2. Go/No Go test with limits applied to inputs.

3. For accuracy, voltage is measured differentially to VDD. Limit

is 0.050V max.

Trang 3 / 10

7-1208

Specifications CD4518BMS, CD4520BMS

TABLE 2. AC ELECTRICAL PERFORMANCE CHARACTERISTICS

PARAMETER SYMBOL CONDITIONS (NOTE 1, 2)

GROUP A

SUBGROUPS TEMPERATURE

LIMITS

MIN MAX UNITS

Propagation Delay

Clock to Output

TPHL1

TPLH1

VDD = 5V, VIN = VDD or GND 9 +25oC - 560 ns

10, 11 +125oC, -55oC - 756 ns

Propagation Delay

Reset to Ouput

TPHL2 VDD = 5V, VIN = VDD or GND 9 +25oC - 650 ns

10, 11 +125oC, -55oC - 878 ns

Transition Time

(Note 2)

TTHL

TTLH

VDD = 5V, VIN = VDD or GND 9 +25oC - 200 ns

10, 11 +125oC, -55oC - 270 ns

Maximum Clock Input

Frequency

FCL VDD = 5V, VIN = VDD or GND 9 +25oC 1.5 - MHz

10, 11 +125oC, -55oC 1.11 - MHz

NOTES:

1. CL = 50pF, RL = 200K, Input TR, TF < 20ns.

2. -55oC and +125oC limits guaranteed, 100% testing being implemented.

TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS

PARAMETER SYMBOL CONDITIONS NOTES TEMPERATURE

LIMITS

MIN MAX UNITS

Supply Current IDD VDD = 5V, VIN = VDD or GND 1, 2 -55oC, +25oC- 5 μA

+125oC - 150 μA

VDD = 10V, VIN = VDD or GND 1, 2 -55oC, +25oC - 10 μA

+125oC - 300 μA

VDD = 15V, VIN = VDD or GND 1, 2 -55oC, +25oC - 10 μA

+125oC - 600 μA

Output Voltage VOL VDD = 5V, No Load 1, 2 +25oC, +125oC,

-55oC

- 50 mV

Output Voltage VOL VDD = 10V, No Load 1, 2 +25oC, +125oC,

-55oC

- 50 mV

Output Voltage VOH VDD = 5V, No Load 1, 2 +25oC, +125oC,

-55oC

4.95 - V

Output Voltage VOH VDD = 10V, No Load 1, 2 +25oC, +125oC,

-55oC

9.95 - V

Output Current (Sink) IOL5 VDD = 5V, VOUT = 0.4V 1, 2 +125oC 0.36 - mA

-55oC 0.64 - mA

Output Current (Sink) IOL10 VDD = 10V, VOUT = 0.5V 1, 2 +125oC 0.9 - mA

-55oC 1.6 - mA

Output Current (Sink) IOL15 VDD = 15V, VOUT = 1.5V 1, 2 +125oC 2.4 - mA

-55oC 4.2 - mA

Output Current (Source) IOH5A VDD = 5V, VOUT = 4.6V 1, 2 +125oC - -0.36 mA

-55oC - -0.64 mA

Output Current (Source) IOH5B VDD = 5V, VOUT = 2.5V 1, 2 +125oC - -1.15 mA

-55oC - -2.0 mA

Output Current (Source) IOH10 VDD = 10V, VOUT = 9.5V 1, 2 +125oC - -0.9 mA

-55oC - -1.6 mA

Output Current (Source) IOH15 VDD =15V, VOUT = 13.5V 1, 2 +125oC - -2.4 mA

-55oC - -4.2 mA

Input Voltage Low VIL VDD = 10V, VOH > 9V, VOL < 1V 1, 2 +25oC, +125oC,

-55oC

- 3V

Input Voltage High VIH VDD = 10V, VOH > 9V, VOL < 1V 1, 2 +25oC, +125oC,

-55oC

+7 - V

Trang 4 / 10

7-1209

Specifications CD4518BMS, CD4520BMS

Propagation Delay

Clock to Output

TPHL1

TPLH1

VDD = 10V 1, 2, 3 +25oC - 230 ns

VDD = 15V 1, 2, 3 +25oC - 160 ns

Propagation Delay

Reset to Output

TPHL2 VDD = 10V 1, 2, 3 +25oC - 225 ns

VDD = 15V 1, 2, 3 +25oC - 170 ns

Transition Time TTHL

TTLH

VDD = 10V 1, 2, 3 +25oC - 100 ns

VDD = 15V 1, 2, 3 +25oC - 80 ns

Maximum Clock Input

Frequency

FCL VDD = 10V 1, 2, 3 +25oC 3 - MHz

VDD = 15V 1, 2, 3 +25oC 4 - MHz

Maximum Clock Rise and

Fall Time

TRCL

TFCL

VDD = 5V 1, 2, 3, 4 +25oC - 15 μs

VDD = 10V 1, 2, 3, 4 +25oC -5 μs

VDD = 15V 1, 2, 3, 4 +25oC -5 μs

Minimum Enable Pulse

Width

TW VDD = 5V 1, 2, 3 +25oC - 400 ns

VDD = 10V 1, 2, 3 +25oC - 200 ns

VDD = 15V 1, 2, 3 +25oC - 140 ns

Minimum Reset Pulse

Width

TW VDD = 5V 1, 2, 3 +25oC - 250 ns

VDD = 10V 1, 2, 3 +25oC - 110 ns

VDD = 15V 1, 2, 3 +25oC - 80 ns

Minimum Clock Pulse

Width

TW VDD = 5V 1, 2, 3 +25oC - 200 ns

VDD = 10V 1, 2, 3 +25oC - 100 ns

VDD = 15V 1, 2, 3 +25oC - 70 ns

Input Capacitance CIN Any Input 1, 2 +25oC - 7.5 pF

NOTES:

1. All voltages referenced to device GND.

2. The parameters listed on Table 3 are controlled via design or process and are not directly tested. These parameters are characterized

on initial design release and upon design changes which would affect these characteristics.

3. CL = 50pF, RL = 200K, Input TR, TF < 20ns.

4. If more than one unit is cascaded, TRCL should be made less than or equal to the sumof the transition time and the fixed propagation

delay of the output of the driving stage for the estimated capacitive load.

TABLE 4. POST IRRADIATION ELECTRICAL PERFORMANCE CHARACTERISTICS

PARAMETER SYMBOL CONDITIONS NOTES TEMPERATURE

LIMITS

MIN MAX UNITS

Supply Current IDD VDD = 20V, VIN = VDD or GND 1, 4 +25oC - 25 μA

N Threshold Voltage VNTH VDD = 10V, ISS = -10μA 1, 4 +25oC -2.8 -0.2 V

N Threshold Voltage

Delta

∆VTN VDD = 10V, ISS = -10μA 1, 4 +25oC - ±1 V

P Threshold Voltage VTP VSS = 0V, IDD = 10μA 1, 4 +25oC 0.2 2.8 V

P Threshold Voltage

Delta

∆VTP VSS = 0V, IDD = 10μA 1, 4 +25oC - ±1 V

Functional F VDD = 18V, VIN = VDD or GND 1 +25oC VOH >

VDD/2

VOL <

VDD/2

V

VDD = 3V, VIN = VDD or GND

Propagation Delay Time TPHL

TPLH

VDD = 5V 1, 2, 3, 4 +25oC - 1.35 x

+25oC

Limit

ns

NOTES: 1. All voltages referenced to device GND.

2. CL = 50pF, RL = 200K, Input TR, TF < 20ns.

3. See Table 2 for +25oC limit.

4. Read and Record

TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS (Continued)

PARAMETER SYMBOL CONDITIONS NOTES TEMPERATURE

LIMITS

MIN MAX UNIT

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